MRFE6P3300HR3
11
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
May 2007
?
Initial Release of Data Sheet
1
Dec. 2008
?
Table 4, Dynamic Characteristics, corrected Ciss
test condition to indicate AC stimulus on the V
GS
connection versus the VDS
connection, corrected Typ value from 106 to 1060 pF, p. 2
?
Fig. 1, Test Circuit Schematic, Z-list, changed Z4, Z5 from 1.013″
x 0.058
″
Microstrip to 1.186
″
x 0.058
″
Microstrip; Z10, Z11 from 1.054″
x 0.150
″
Microstrip to 1.306
″
x 0.150
″
Microstrip; and Z19, Z20 from
0.165″
x 0.339
″
Microstrip to 0.339
″
x 0.165
″
Microstrip; also separated Z1 and Z18 into two lines in
Z-list, p. 3
?
Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
?
Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
2
Dec. 2009
?
Data sheet revised to reflect part status change, removing MRFE6P3300HR5. Refer to PCN13420.
(See Rev. 1 data sheet for MRFE6P3300HR5.)
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